IT1221867B - Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable - Google Patents

Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable

Info

Publication number
IT1221867B
IT1221867B IT06613/83A IT661383A IT1221867B IT 1221867 B IT1221867 B IT 1221867B IT 06613/83 A IT06613/83 A IT 06613/83A IT 661383 A IT661383 A IT 661383A IT 1221867 B IT1221867 B IT 1221867B
Authority
IT
Italy
Prior art keywords
passable
power transistor
bipolar power
balancing resistance
basic
Prior art date
Application number
IT06613/83A
Other languages
English (en)
Italian (it)
Other versions
IT8306613A0 (it
Inventor
Salvatore Musumeci
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT06613/83A priority Critical patent/IT1221867B/it
Publication of IT8306613A0 publication Critical patent/IT8306613A0/it
Priority to FR8404062A priority patent/FR2546335B1/fr
Priority to GB08408549A priority patent/GB2140204B/en
Priority to US06/608,084 priority patent/US4800416A/en
Priority to DE3417887A priority patent/DE3417887C2/de
Priority to MT949A priority patent/MTP949B/xx
Priority to JP59098455A priority patent/JPS59219961A/ja
Application granted granted Critical
Publication of IT1221867B publication Critical patent/IT1221867B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
IT06613/83A 1983-05-16 1983-05-16 Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable IT1221867B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT06613/83A IT1221867B (it) 1983-05-16 1983-05-16 Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
FR8404062A FR2546335B1 (fr) 1983-05-16 1984-03-16 Structure de transistor bipolaire de puissance a resistance compensatrice de base incorporee by-passable
GB08408549A GB2140204B (en) 1983-05-16 1984-04-03 Power transistor structure with ballast resistor
US06/608,084 US4800416A (en) 1983-05-16 1984-05-08 Bipolar power transistor having bypassable incorporated-base ballast resistance
DE3417887A DE3417887C2 (de) 1983-05-16 1984-05-14 Bipolare Leistungstransistorstruktur mit überbrückbar eingebautem Basis-Ausgleichswiderstand
MT949A MTP949B (en) 1983-05-16 1984-05-14 Power bipolar transistor structure embodying a bypassable ballast base resistance
JP59098455A JPS59219961A (ja) 1983-05-16 1984-05-16 バイポ−ラパワ−トランジスタ構体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT06613/83A IT1221867B (it) 1983-05-16 1983-05-16 Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable

Publications (2)

Publication Number Publication Date
IT8306613A0 IT8306613A0 (it) 1983-05-16
IT1221867B true IT1221867B (it) 1990-07-12

Family

ID=11121419

Family Applications (1)

Application Number Title Priority Date Filing Date
IT06613/83A IT1221867B (it) 1983-05-16 1983-05-16 Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable

Country Status (7)

Country Link
US (1) US4800416A (en])
JP (1) JPS59219961A (en])
DE (1) DE3417887C2 (en])
FR (1) FR2546335B1 (en])
GB (1) GB2140204B (en])
IT (1) IT1221867B (en])
MT (1) MTP949B (en])

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
IT1230895B (it) * 1989-06-22 1991-11-08 Sgs Thomson Microelectronics Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.
GB8914554D0 (en) * 1989-06-24 1989-08-16 Lucas Ind Plc Semiconductor device
DE58908843D1 (de) * 1989-10-30 1995-02-09 Siemens Ag Eingangsschutzstruktur für integrierte Schaltungen.
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US5684326A (en) * 1995-02-24 1997-11-04 Telefonaktiebolaget L.M. Ericsson Emitter ballast bypass for radio frequency power transistors
US5939739A (en) * 1996-05-31 1999-08-17 The Whitaker Corporation Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors
US6455919B1 (en) 2001-03-19 2002-09-24 International Business Machines Corporation Internally ballasted silicon germanium transistor
KR100451752B1 (ko) * 2002-02-06 2004-10-08 엘지전자 주식회사 베이스 밸러스팅 캐패시터를 갖는 이종접합 바이폴라트랜지스터
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260481A (en]) * 1960-02-08
GB1319037A (en) * 1971-03-26 1973-05-31 Ferranti Ltd Transistors
BE791487A (fr) * 1971-11-18 1973-03-16 Rca Corp Dispositif semiconducteur
GB1403457A (en) * 1973-01-02 1975-08-28 Motorola Inc Single diffused monolithic darlington circuit and manufacture thereof
US3858234A (en) * 1973-01-08 1974-12-31 Motorola Inc Transistor having improved safe operating area
US3836995A (en) * 1973-05-25 1974-09-17 Rca Corp Semiconductor darlington circuit
NL7312547A (nl) * 1973-09-12 1975-03-14 Philips Nv Halfgeleiderinrichting, werkwijze ter vervaardiging daarvan en schakeling bevattende de inrichting.
US4136355A (en) * 1976-02-10 1979-01-23 Matsushita Electronics Corporation Darlington transistor
IT1094080B (it) * 1978-04-20 1985-07-26 Ates Componenti Elettron Dispositivo a semiconduttore protetto contro le sovratensioni
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
JPS5658261A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
IT8306613A0 (it) 1983-05-16
DE3417887C2 (de) 1998-07-23
JPH0550852B2 (en]) 1993-07-30
FR2546335A1 (fr) 1984-11-23
GB8408549D0 (en) 1984-05-16
GB2140204A (en) 1984-11-21
GB2140204B (en) 1986-12-31
US4800416A (en) 1989-01-24
FR2546335B1 (fr) 1988-07-08
MTP949B (en) 1985-07-11
JPS59219961A (ja) 1984-12-11
DE3417887A1 (de) 1984-11-22

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